Work

Sub-nanosecond switching of a tantalum oxide memristor

Year: 2011

Type: article

Abstract: We report sub-nanosecond switching of a metal-oxide-metal memristor utilizing a broadband 20 GHz experimental setup developed to observe fast switching dynamics. Set and reset operations were successfully performed in the tantalum oxide memristor using pulses with durations of 105 and 120 ps, respectively. Reproducibility of the sub-nanosecond switching was also confirmed as the device switched over consecutive cycles.

Source: Nanotechnology

DOI: 10.1088/0957-4484/22/48/485203

Authors: Antonio C Torrezan, John Paul Strachan, Gilberto Medeiros-Ribeiro, R Stanley Williams

Institution: Hewlett-Packard (United States)

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W2149380925

FWCI: 24.52

Cites: 21

Cited by: 696

Related to: 10