Demonstration of a silicon Raman laser
Year: 2004
Type: article
Abstract: We report the demonstration of the first silicon Raman laser. Experimentally, pulsed Raman laser emission at 1675 nm with 25 MHz repetition rate is demonstrated using a silicon waveguide as the gain medium. The laser has a clear threshold at 9 W peak pump pulse power and a slope efficiency of 8.5%.
Source: Optics Express
Authors: Ozdal Boyraz, Bahram Jalali
Institution: University of California, Los Angeles
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
OpenAlex ID: W2149924298