Work

Multiple Sb ion implantation for deep-submicron pMOS channel doping

Year: 1997

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/16.556155

Authors: K. Suzuki, A. Satoh, T. Sugii

Institution: Fujitsu (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2149934981

FWCI: 1.003

Cites: 11

Cited by: 3

Related to: 10