Work

Semiconductors for high-voltage, vertical channel field-effect transistors

Year: 1982

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.331646

Author: B. J. Baliga

Institution: General Electric (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2150108215

FWCI: 1.091

Cites: 21

Cited by: 518

Related to: 10