Work

An improved model for boron diffusion and activation in silicon

Year: 2009

Type: article

Source: AIChE Journal

DOI: 10.1002/aic.11984

Authors: Charlotte T. M. Kwok, Richard D. Braatz, Silke Paul, Wilfried Lerch, Edmund G. Seebauer

Institutions: University of Illinois Urbana-Champaign, University of Illinois System

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, American Chemical Society Petroleum Research Fund

OpenAlex ID: W2151786685

FWCI: 0.529

Cites: 43

Cited by: 7

Related to: 10