Work

Electrochemical Metallization and Trapping/Detrapping Resistive Switching Mechanism in Al/VOx/Cu RRAM

Year: 2014

Type: article

Abstract: We investigated resistive switching mechanism in Al/VO x /Cu RRAM structure. The temperature dependence of resistance on low resistive state (LRS) and conductive atomic force microscopy (CAFM) measurement confirmed the formation and rupture of Cu conductive filaments (Cu-CF) in VO x dielectric. Cu-CF was formed after a trapping process (HRS→LRS) and ruptured at Schottky junction Al/VO x interface (LRS→HRS) judged by rectification and C-V characteristics of high resistive state (HRS). A model combining trapping/detrapping and Cu-CF formation/rupture is proposed to describe resistive switching mechanism. Based on the combined resistive switching mechanism, an application of multi-level states in Al/AlO x /VO x /Cu device is achieved successfully.

Source: ECS Solid State Letters

Authors: K. Zhang, K. Sun, F. Wang, Y. Han, Z. Jiang, B. Wang, K. Liu, H. S. P. Wong

Institutions: Tianjin University of Technology, Stanford SystemX Alliance, Stanford University, Seoul National University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: bronze

Funders: National Natural Science Foundation of China, Natural Science Foundation of Tianjin City, Program for New Century Excellent Talents in University

Awards: G1165046264, G1704137926, G226631651, G2775642429, G4552255000, G5282266605, G6258893751, G8603919622, G894070757

OpenAlex ID: W2153885196

FWCI: 0.884

Cites: 1

Cited by: 13

Related to: 10