Work

Design, fabrication and characterization of GaN-based HFET's

Year: 2002

Type: conference-paper

Source: Advanced Workshop on Frontiers in Electronics (WOFE)

DOI: 10.1109/wofe.1997.621132

Authors: L.F. Eastman, K. Chu, Jin-Wook Burm, W.J. Schaff, M. Murphy, N. Weimann

Institution: Cornell University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2154732855

FWCI:

Cites:

Cited by: 3

Related to: 10