Year: 2001
Type: article
Abstract: Trilayer junctions with c-axis oriented YBaCuO/PrBaCuO/YBaCuO films were fabricated. We used vicinal substrates in order to improve the surface morphology of YBaCuO base electrodes. Junctions with PrBaCuO barrier thickness of 15 nm showed resistively shunted junction (RSJ)-like I–V curves with a small excess current of below 10% at 4.2 K. The spreads (1σ) of I c and R n were 11% and 8.8%, respectively, for 14 junctions on a chip. These values are markedly small considering the trilayer junctions. The flattening of the interfaces between YBaCuO and PrBaCuO layers may improve the uniformity of the barrier thickness.
DOI: 10.1143/jjap.40.l609
Authors: Ken'ichi Kuroda, Tetsuya Takami, Kazuhisa Nishi, Yukihiko Wada, Tatsuo Ozeki
Institution: Mitsubishi Electric (Japan)
Language: English
Subfield: Astronomy and Astrophysics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2155877160