Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors
Year: 1997
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.644081
Authors: A.K. Agarwal, S. Seshadri, L.B. Rowland
Institution: Northrop Grumman (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2156650445