High-voltage double-implanted power MOSFET's in 6H-SiC
Year: 1997
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.556091
Authors: J.N. Shenoy, J.A. Cooper, M.R. Melloch
Institution: Purdue University West Lafayette
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2156651960