Work

Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities

Year: 2011

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/j.microrel.2011.09.002

Author: Tibor Grasser

Institution: TU Wien

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2157180100

FWCI: 18.42

Cites: 108

Cited by: 592

Related to: 10