Work

Large-signal HBT model with improved collector transit time formulation for GaAs and InP technologies

Year: 2003

Type: conference-paper

Source: IEEE MTT-S International Microwave Symposium digest

DOI: 10.1109/mwsym.2003.1212453

Authors: M. Iwamoto, D.E. Root, J.B. Scott, A. Cognata, P.M. Asbeck, B. Hughes, D.C. D'Avanzo

Institutions: University of California San Diego, Agilent Technologies (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2157341007

FWCI: 4.713

Cites: 5

Cited by: 67

Related to: 10