Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy
Year: 1997
Type: article
Abstract: Films of GaN have been grown simultaneously on three different substrates, sapphire, silicon carbide and GaN, by molecular beam epitaxy. The structural and optical properties of the films have been studied using x-ray diffraction techniques and low-temperature photoluminescence spectroscopy respectively. There is a clear correlation between the structural and optical properties of the film and the nature of substrate. The lattice parameter of the film is shown to depend on the type of substrate. The incorporation of shallow donors is also strongly influenced. The effect of lattice parameter, mismatch and differential thermal expansion on film properties is discussed.
Authors: T S Cheng, C T Foxon, G B Ren, J W Orton, Yu V Melnik, I P Nikitina, A E Nikolaev, S V Novikov, V A Dmitriev
Institutions: University of Nottingham, Ioffe Institute
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
Funder: Arizona State University
OpenAlex ID: W2157654052