Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates
Year: 2005
Type: article
Source: IEEE Electron Device Letters
Authors: S.G. Thomas, E.S. Johnson, C. Tracy, P. Maniar, Xiuling Li, B. Roof, Q. Hartmann, D.A. Ahmari
Institutions: Motorola (United States), EpiWorks (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2157693013