Work

Large‐Area Vapor‐Phase Growth and Characterization of MoS2 Atomic Layers on a SiO2 Substrate

Year: 2012

Type: article

Abstract: Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN).

Source: Small

DOI: 10.1002/smll.201102654

Authors: Yongjie Zhan, Zheng Liu, Sina Najmaei, Pulickel M. Ajayan, Jun Lou

Institution: Rice University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green