Work

Silicone substrate with in situ strain relief for stretchable thin-film transistors

Year: 2011

Type: article

Abstract: We have manufactured stretchable thin-film transistors and interconnects directly onto an engineered silicone matrix with localized and graded mechanical compliance. The fabrication only involves planar and standard processing. Brittle active device materials are patterned on non deformable elastomer regions (strain <1% at all times) while interconnects run smoothly from “stiff” to “soft” elastomer. Pentacene thin-film transistors sustain applied strain up to 13% without electrical degradation and mechanical fracture. This integrated approach opens promising options for the manufacture of physically adaptable and transformable circuitry.

Source: Applied Physics Letters

DOI: 10.1063/1.3570661

Authors: Ingrid M. Graz, Darryl P. J. Cotton, Adam Robinson, Stéphanie P. Lacour

Institution: University of Cambridge

Language: English

Topic: Organic Electronics and Photovoltaics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: bronze

Funder: Engineering and Physical Sciences Research Council