Work

Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays

Year: 2010

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2010.2058771

Authors: Mattia Boniardi, Daniele Ielmini, Simone Lavizzari, Andrea L. Lacaita, Andrea Redael, Agostino Pirovano

Institutions: Politecnico di Milano, Micron (Italy), Istituto di Fotonica e Nanotecnologie, National Research Council

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2158464944

FWCI: 1.819

Cites: 27

Cited by: 108

Related to: 10