High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
Year: 2005
Type: article
Source: IEEE Electron Device Letters
Authors: Yong Cai, Yugang Zhou, K.J. Chen, K.M. Lau
Institution: Hong Kong University of Science and Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2158892965