Work

InGaP/GaAs power HBTs with a low bias voltage

Year: 2002

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1995.499336

Authors: S. Ohara, H. Yamada, T. Iwai, Y. Yamaguchi, K. Imanishi, K. Joshin

Institution: Fujitsu (Japan)

Language: English

Topic: Advanced Power Amplifier Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2159045680

FWCI: 1.422

Cites: 6

Cited by: 10

Related to: 10