Work

Electrical Spin Injection into Graphene through Monolayer Hexagonal Boron Nitride

Year: 2013

Type: article

Abstract: We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni 81 Fe 19 /ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.

Source: Applied Physics Express

DOI: 10.7567/apex.6.073001

Authors: Takehiro Yamaguchi, Yoshihisa Inoue, Satoru Masubuchi, Sei Morikawa, Masahiro Onuki, Kenji Watanabe, Takashi Taniguchi, Rai Moriya, Tomoki Machida

Institutions: The University of Tokyo, National Institute for Materials Science, Japan Science and Technology Agency

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze

Funders: Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science, Japan Science and Technology Agency, Precursory Research for Embryonic Science and Technology

Awards: Stability of surface contact for hexagonal boron nitride atomic layer, Growth of highly oriented h-BN single crystal by chemical vapor deposition method, Synthesis of high purity hBN crystals and realization for their new functions, G813309828, G8160924747

OpenAlex ID: W2159344122

FWCI: 6.827

Cites: 31

Cited by: 111

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