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Bandgap Engineering of Strained Monolayer and Bilayer MoS 2

Year: 2013
Type: article
Abstract: We report the influence of uniaxial tensile mechanical strain in the range 0-2.2% on the phonon spectra and bandstructures of monolayer and bilayer molybdenum disulfide (MoS2) two-dimensional crystals. First, we employ Raman spectroscopy to observe phonon softening with increased strain, breaking the degeneracy in the E' Raman mode of MoS2, and extract a Grüneisen parameter of ~1.06. Second, using photoluminescence spectroscopy we measure a decrease in the optical band gap of MoS2 that is approximately linear with strain, ~45 meV/% strain for monolayer MoS2 and ~120 meV/% strain for bilayer MoS2. Third, we observe a pronounced strain-induced decrease in the photoluminescence intensity of monolayer MoS2 that is indicative of the direct-to-indirect transition of the character of the optical band gap of this material at applied strain of ~1%. These observations constitute a demonstration of strain engineering the band structure in the emergent class of two-dimensional crystals, transition-metal dichalcogenides.
Source: Nano Letters
Authors: Hiram J. Conley, Bin Wang, Jed I. Ziegler, Richard F. Haglund, Sokrates T. Pantelides, Kirill I. Bolotin
Language: English
Open Access status: green
OpenAlex ID: W2160280418
FWCI: 56.01
Cites: 35
Cited by: 2,571
Related to: 10