Work

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Year: 2003

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2003.815862

Authors: A. Asenov, A.R. Brown, J.H. Davies, S. Kaya, G. Slavcheva

Institutions: University of Glasgow, Ohio University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Aeronautics and Space Administration, Purdue University, Arizona State University, Ames Research Center, Engineering and Physical Sciences Research Council, Office of Naval Research

Award: G1138269206

OpenAlex ID: W2161648718

FWCI: 16.98

Cites: 95

Cited by: 556

Related to: 8