Impact ionization and distribution functions in sub-micron nMOSFET technologies
Year: 1995
Type: article
Source: IEEE Electron Device Letters
DOI: 10.1109/55.464810
Authors: J.D. Bude, M. Mastrapasqua
Institutions: AT&T (United States), Eindhoven University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2161732750