Work

Direct Low-Temperature Nanographene CVD Synthesis over a Dielectric Insulator

Year: 2010

Type: article

Abstract: Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post-synthesis transfer of the graphene onto a Si wafer, or in the case of epitaxial growth on SiC, temperatures above 1000 degrees C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nanographene and few-layer nanographene are directly formed over magnesium oxide and can be achieved at temperatures as low as 325 degrees C.

Source: ACS Nano

DOI: 10.1021/nn100971s

Authors: Mark H. Rümmeli, Alicja Bachmatiuk, Andrew Scott, Felix Börrnert, Jamie H. Warner, Volker Hoffman, Jarrn-Horng Lin, Gianaurelio Cuniberti, Bernd Büchner

Institutions: Leibniz Institute for Solid State and Materials Research, Technische Universität Dresden, Max Bergmann Center of Biomaterials, University of Oxford, National University of Tainan

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: Freistaat Sachsen

OpenAlex ID: W2163306381

FWCI: 9.931

Cites: 22

Cited by: 342

Related to: 9