Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
Year: 2001
Type: article
DOI: 10.1109/16.906450
Authors: S. Keller, Yi-Feng Wu, G. Parish, Naiqian Ziang, J.J. Xu, B.P. Keller, S.P. DenBaars, U.K. Mishra
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2163458830