Work

Radiation and hot-electron hardness of SiO/sub 2//Si grown in O/sub 2/ with trichloroethane additive

Year: 2003

Type: conference-paper

DOI: 10.1109/relphy.1988.23442

Authors: Y. Wang, Y. Nishioka, T.P. Ma, R.C. Barker

Institutions: Yale University, Hitachi (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2163722997

FWCI:

Cites: 15

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Related to: 10