Work

Ultimately thin double-gate SOI MOSFETs

Year: 2003

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2003.811371

Authors: T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, K. Murase

Institutions: Centre National de la Recherche Scientifique, Université Joseph Fourier, Institut de Microélectronique, Electromagnétisme et Photonique, NTT (Japan), NTT Basic Research Laboratories, NTT Innovative Devices Corporation (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2166329620

FWCI: 17.21

Cites: 49

Cited by: 246

Related to: 10