Work

Scaling the gate dielectric: Materials, integration, and reliability

Year: 1999

Type: article

Source: IBM Journal of Research and Development

DOI: 10.1147/rd.433.0245

Author: D. A. Buchanan

Institution: IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2166354192

FWCI: 32.5

Cites: 146

Cited by: 365

Related to: 10