Work

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates

Year: 2006

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2006.881020

Authors: Y. Dora, A. Chakraborty, L. Mccarthy, S. Keller, S.P. Denbaars, U.K. Mishra

Institution: University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2167950345

FWCI: 12.11

Cites: 10

Cited by: 458

Related to: 10