Work

Synthesis of silicon quantum dot buried SiOxfilms with controlled luminescent properties for solid-state lighting

Year: 2006

Type: article

Abstract: Highly luminescent Si quantum dot embedded SiO x films were studied as down-converting emitters for solid-state lighting applications. Strong red photoluminescence was observed from these Si nanocrystal embedded films prepared by thermal evaporation of SiO in vacuum or an O 2 atmosphere followed by anneal at 1100 °C. The stoichiometry (1.0< x <1.9) and refractive indices (1.5–1.75) of these films could be well controlled by varying the oxygen flow rate and the deposition rate. The emission peak shifted from 840 to 745 nm with increasing O 2 flow rate due to a decrease in the size of the Si QDs. Two excitation bands, peaked at 280 and 370 nm, were observed from these samples. The 370 nm band was much stronger than the 280 nm band, which is near the UV LED emission range required for solid-state lighting applications. Blue and green emissions were also observed from samples annealed at a lower temperature.

Source: Nanotechnology

DOI: 10.1088/0957-4484/17/17/032

Authors: Z T Kang, B Arnold, C J Summers, B K Wagner

Institutions: Georgia Institute of Technology, Georgia Tech Research Institute, Fort Valley State University

Language: English

Topic: Silicon Nanostructures and Photoluminescence

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Division of Materials Research

Award: REU Site: Structure-Property Correlations across Nano-, Micro-, and Macro Length Scales in Advanced Materials