Work

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Year: 2006

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2005.862708

Authors: W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura

Institution: Toshiba (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2169301346

FWCI: 8.236

Cites: 20

Cited by: 589

Related to: 9