Year: 2011
Type: article
Abstract: Nonequilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the formT=T||M×(z×;M)+T⊥z×M, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular componentT⊥, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torqueT||emerges, proportional to the tunneling current density. Experimental implications on magnetic devices are discussed.
Source: IEEE Transactions on Magnetics
Author: Aurelien Manchon
Institution: King Abdullah University of Science and Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2170009971