Work

High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits

Year: 2013

Type: article

Source: Nanoscale

DOI: 10.1039/c3nr01899g

Authors: H. S. Song, S. L. Li, L. Gao, Y. Xu, K. Ueno, J. Tang, Y. B. Cheng, K. Tsukagoshi

Institutions: National Institute for Materials Science, Wuhan National Laboratory for Optoelectronics, Research Center for Materials Nanoarchitectonics, Huazhong University of Science and Technology, Saitama University, Monash University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Japan Society for the Promotion of Science, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities

Award: G8160924747

OpenAlex ID: W2170412441

FWCI: 7.38

Cites: 32

Cited by: 310

Related to: 10