Work

A compact transport and charge model for GaN-based high electron mobility transistors for RF applications

Year: 2013

Type: dissertation

Source: DSpace@MIT (Massachusetts Institute of Technology)

Author: Ujwal Radhakrishna

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2171222691

Cites: 35

Cited by: 12

Related to: 10