Work

Growth of Si1−xGex, Strained Layers Using Atmospheric-Pressure CVD

Year: 1991

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-220-285

Authors: F. Namavar, J. M. Manke, E. P. Kvam, M. M. Sanfacon, C. H. Perry, N. M. Kalkhoran

Institutions: Spire Corporation (United States), Purdue University West Lafayette, Northeastern University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W2172228081

FWCI: 1.603

Cites: 20

Cited by: 9

Related to: 10