Growth and characterization of BiGd garnet thick films on 2-inch-diamter Nd3Ga5O12 substrates.
Year: 1986
Type: article
Abstract: Two inch diameter, 300 μm thick (BiGd)3(FeGaAl)5O12 films with a mirror surface were grown on {111} Nd3Ga5O12 substrates by liquid phase epitaxy. The extinction ratio was measured for a 30 × 18 mm2 specimen cut from a two inch diameter wafer. A ratio of 37 ± 3dB was obtained throughout the specimen. Several swirl patterns were observed at the periphery of the grown films. The swirl consists of a pit followed by a shallow groove, and was revealed to be caused by a shallow pit corresponding to the defect of NdGG substrate. Degradation of the extinction ratio was found at the pit of the swirl.
Authors: T. Ishikawa, T. Hibiya, K. Ono, K. Shiroki
Institution: NEC (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W2174163240