Work

Si and Mg Doped Gan Layers Grown by Gas Source Molecular Beam Epitaxy Using Ammonia

Year: 1997

Type: article

Source: MRS Proceedings

DOI: 10.1557/proc-482-211

Authors: N. Grandjean, J. Massies, M. Leroux

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2130509562

FWCI: 0.239

Cites: 8

Cited by: 1

Related to: 10