Year: 2004
Type: conference-paper
Abstract: This paper reports on implementation and high-Q operation of thick bulk mode VHF capacitive disk resonators with reduced motional resistance.Single crystal silicon (SCS) disk resonators as thick as 18 m with capacitive gap size of 160nm (aspect ratio>110) are fabricated on SOI substrates using a three-mask version of the HARPSS on SOI process.The new resonator design with increased number of electrodes as well as larger device thickness results in over 20X lower motional resistance and larger signal to noise ratio comparing to the previously demonstrated thin VHF HARPSS resonators.Quality factor as high as 25,900 is measured for an 18 m thick side-supported disk resonator in air at the frequency of 149.3MHz.The same resonator exhibits a quality factor of 45,700 in vacuum.Q ~ 45,700 at 149.3MHz V p = 17V, R m = 43.3kQ ~ 25,900 at 149.3MHz in air V p = 15V, R m = 91.2kV p v o v i Q ~ 39,300 at 147.8MHz V p = 12V, R m = 883k Q ~ 8,200 at 147.8MHz in air V p = 17V R m = 2.073M
Authors: S. Pourkamali, F. Ayazi
Institution: Georgia Institute of Technology
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2182966584