Year: 2010
Type: conference-paper
Abstract: This paper reports on a new temperature compensation technique for high-Q AlN-on-Silicon bulk acoustic wave resonators.A uniform array of silicon dioxide (SiO 2 ) pillars are formed in the silicon body of the resonator to generate a composite resonator with a near-zero temperature coefficient of frequency (TCF).At a resonance frequency of 24MHz, a total frequency drift of 90 ppm over the temperature range of -20 °C to 100 °C was measured while Q exceeded 10,000 at all temperatures.This compensation technique is applicable to bulk acoustic resonators with thick silicon substrate that demonstrate high Q as well as good power handling and linearity.
Authors: R. Tabrizian, G. Casinovi, F. Ayazi
Institution: Georgia Institute of Technology
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2184725533