Work

Monte Carlo Simulation of p- and n-channel GOI MOSFETs by Solving the Quantum Boltzmann Equation

Year: 2005

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2005.856806

Authors: G. Du, X. Liu, Z. Xia, J. Kang, Y. Wang, R. Han, H. Yu, D.L. Kwong

Institutions: Peking University, IMEC

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2009137532

FWCI: 2.767

Cites: 21

Cited by: 32

Related to: 10