Hot-carrier-induced degradation of N/sub 2/O-oxynitrided gate oxide NMOSFETs
Year: 1996
Type: article
DOI: 10.1109/16.535320
Institutions: Sharp Corporation (Japan), The University of Osaka
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2139283867