Year: 1971
Type: article
Abstract: The equilibrium partial pressures of various vapor species in the system silicon‐carbon‐hydrogen were computed for conditions under which epitaxial deposition has been achieved. It was found that in the temperature range 1300°–1700°C the tendency to form solid silicon carbide decreases with increasing temperature and with increasing silicon to carbon atom ratio. The limiting conditions under which single crystalline deposits of could be experimentally obtained were those within which was computed to be the only thermodynamically stable solid phase. At 1650° single‐phase silicon carbide condenses at ratios ranging from 0.2 to 0.89. The computed results were in good agreement with experiments.
DOI: 10.1149/1.2408042
Authors: J. M. Harris, H. C. Gatos, A. F. Witt
Institutions: Massachusetts Institute of Technology, IBM (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2217458425