Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain
Year: 2015
Type: article
Source: Nano Letters
Institutions: Institute for Basic Science, Sungkyunkwan University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funder: Institute for Basic Science
Award: G258299307
OpenAlex ID: W2218369040