Work

Development of a Non-Volatile Memristor Device Based on a Manganese-Doped Titanium Oxide Material

Year: 2010

Type: article

Abstract: This document is copyrighted material. Under copyright law, no parts of this document may be reproduced without the expressed permission of the author. iii

Source: OhioLink ETD Center (Ohio Library and Information Network)

Author: J. Ordosgoitti

Institution: University of Toledo

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2228656158

FWCI:

Cites: 34

Cited by: 1

Related to: 10