Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics
Year: 2015
Type: article
Abstract: High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical-electronic nanodevices.
Source: Nature Communications
DOI: 10.1038/ncomms8430
Institutions: University of Science and Technology Beijing, University of California, Los Angeles, Institute of Physics, Academia Sinica, California NanoSystems Institute, National Institute for Materials Science, Research Center for Materials Nanoarchitectonics, Chung Yuan Christian University, King Abdullah University of Science and Technology, Academia Sinica
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
Funders: National Science Foundation, National Natural Science Foundation of China, National Science Council, Academia Sinica, Project 211, Division of Emerging Frontiers in Research and Innovation, California NanoSystems Institute, Program for Changjiang Scholars and Innovative Research Team in University
OpenAlex ID: W2239178257
