Defect identification in semiconductors with positron annihilation: Experiment and theory
Year: 2013
Type: article
Abstract: Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.
Source: Reviews of Modern Physics
Authors: Filip Tuomisto, Ilja Makkonen
Institution: Aalto University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W2244527694