Highly-symmetric silicon dioxide shallow shell resonators with angstrom-level roughness
Year: 2015
Type: conference-paper
Authors: Benoit Hamelin, Vahid Tavassoli, Farrokh Ayazi
Institution: Georgia Institute of Technology
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2245708479