Work

TEM investigations of Si ion-implanted GaN

Year: 1998

Type: article

Authors: Jin Zou, D. J. H. Cockayne, Xiangfeng Duan, Hark Hoe Tan, J. S. Williams, S. J. Pearton, S. A. Stall

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2247586702

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