Exact Characterization of Threshold Voltage Instability in 4H-SiC MOSFETs by Non-Relaxation Method
Year: 2015
Type: article
Abstract: In this work, we investigated the methods that measure the threshold voltage (Vth) instability without relaxation of the gate stress during the Vth measurement. We propose a non-relaxation method that demonstrates exact Vth shifts compared with conventional methods that are not as accurate. In the non-relaxation method, the constant gate-source voltage (Vgs) is continuously applied as a gate stress while the drain voltage (Vds) shift required to maintain a constant drain current (Id) is measured. Then, the Vds shift is converted to a Vth shift. The Vth shift values measured by the non-relaxation method are larger than those measured by the other methods, which means that the non-relaxation method can very accurately measure the Vth shift.
Source: Materials science forum
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W2248947546