Work

Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(0 0 1) interfaces

Year: 2016

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2016.01.123

Authors: Kasra Sardashti, Kai-Ting Hu, Kechao Tang, Sangwook Park, Hyonwoong Kim, Shailesh Madisetti, Paul McIntyre, Serge Oktyabrsky, Shariq Siddiqui, Bhagawan Sahu, Noami Yoshida, Jessica Kachian, Andrew Kummel

Institutions: University of California San Diego, Stanford University, University at Albany, State University of New York, GlobalFoundries (United States), Applied Materials (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2250074626

FWCI: 1.372

Cites: 43

Cited by: 32

Related to: 10